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| SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 OptiMOS Power-Transistor Feature * N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO262 -3-1 P- TO263 -3-2 40 3.4 80 P- TO220 -3-1 V m A * Enhancement mode * 175C operating temperature * Avalanche rated * dv/dt rated Type SPP80N04S2-04 SPB80N04S2-04 SPI80N04S2-04 Package Ordering Code Marking 2N0404 2N0404 2N0404 Value 80 80 Unit A P- TO220 -3-1 Q67040-S4260 P- TO263 -3-2 Q67040-S4257 P- TO262 -3-1 Q67060-S6173 Maximum Ratings, at Tj = 25 C, unless otherwise specified Symbol Parameter Continuous drain current 1) TC=25C TC=100C ID Pulsed drain current TC=25C I D puls EAS EAR dv/dt VGS Ptot T j , T stg 320 810 30 6 20 300 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID=80A, VDD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=80A, VDS=32V, di/dt=200A/s, Tjmax =175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA Values typ. 0.3 max. 0.5 62 62 40 Unit - K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, I D=1mA Symbol min. V(BR)DSS VGS(th) I DSS Values typ. 3 max. 4 Unit 40 2.1 V Gate threshold voltage, VGS = VDS ID=250A Zero gate voltage drain current V DS=40V, V GS=0V, Tj=25C V DS=40V, V GS=0V, Tj=125C2) A 0.01 1 1 1 100 100 nA m 3 2.7 3.7 3.4 Gate-source leakage current V GS=20V, VDS=0V I GSS RDS(on) - Drain-source on-state resistance 4) V GS=10V, ID=80A V GS=10V, ID=80A, SMD version 1Current limited by bondwire ; with an R thJC = 0.5K/W the chip is able to carry I D= 208A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4Diagrams are related to straight lead versions Page 2 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Symbol Conditions min. Values typ. 125 5250 1870 420 16 45 50 40 max. - Unit gfs Ciss Coss Crss td(on) tr td(off) tf V DS2*ID*R DS(on)max, ID=80A V GS=0V, VDS=25V, f=1MHz 60 - S 6980 pF 2490 630 24 68 75 60 ns V DD=20V, V GS=10V, ID=80A, RG=2.2 Qgs Qgd Qg VDD =32V, ID=80A - 25 50 135 5.3 35 75 170 - nC VDD =32V, ID=80A, VGS =0 to 10V V(plateau) VDD = 32 V , ID=80A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr VGS =0V, IF=80A VR =20V, IF=lS , diF/dt=100A/s IS TC=25C - 0.9 60 100 80 320 1.3 75 125 A V ns nC Page 3 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 1 Power dissipation Ptot = f (TC) parameter: V GS 6 V 320 SPP80N04S2-04 2 Drain current ID = f (TC) parameter: V GS 10 V 90 SPP80N04S2-04 W A 240 70 60 Ptot ID 50 40 30 20 10 0 0 100 120 140 160 C 190 200 160 120 80 40 0 0 20 40 60 80 20 40 60 80 100 120 140 160 C 190 TC TC 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC = 25 C 10 3 SPP80N04S2-04 4 Max. transient thermal impedance ZthJC = f (t p) parameter : D = t p/T K/W 10 1 SPP80N04S2-04 DS /I D A V tp = 59.0s 100 s 10 0 ZthJC 1 ms ID R 10 2 DS (o n) = 10 -1 10 -2 D = 0.50 0.20 0.10 0.05 0.02 10 1 10 -3 10 -4 single pulse 0.01 10 0 -1 10 10 0 10 1 V 10 2 10 -5 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 5 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 80 s 190 SPP80N04S2-04 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: V GS 13 SPP80N04S2-04 A 160 140 Ptot = 300W g f VGS [V] a 4.5 b 5.0 5.3 5.5 5.7 6.0 10.0 m 11 10 b c d e c d RDS(on) e 9 8 7 6 5 4 f ID 120 d e f g 100 80 60 40 20 a b c 3 2 1 VGS [V] = b 5.0 c 5.3 d 5.5 e f 5.7 6.0 g 10.0 g 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 0 20 40 60 80 100 120 A 160 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 s 320 8 Typ. forward transconductance g fs = f(ID); Tj=25C parameter: gfs 160 A S 240 120 200 gfs 9 V VGS ID 100 160 80 120 60 80 40 40 20 0 0 1 2 3 4 5 6 7 0 0 20 40 60 80 100 120 140 160 A 200 ID Page 5 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 80 A, VGS = 10 V 11 SPP80N04S2-04 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: V GS = VDS 4 m 9 V 1.25 mA 250 A RDS(on) 8 7 6 VGS(th) 98% typ C 3 2.5 2 5 4 3 2 1 0 -60 -20 20 60 100 140 200 0.5 1.5 1 0 -60 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 5 12 Forward character. of reverse diode IF = f (VSD) parameter: Tj , tp = 80 s 10 3 SPP80N04S2-04 pF A 10 4 10 2 C Coss 10 3 IF 10 1 Ciss Crss Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 2 0 5 10 15 20 V 30 10 0 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS VSD Page 6 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 13 Typ. avalanche energy EAS = f (Tj) par.: ID = 80 A, VDD = 25 V, RGS = 25 850 14 Typ. gate charge VGS = f (QGate) parameter: ID = 80 A pulsed 16 SPP80N04S2-04 mJ 700 V 12 EAS 600 VGS 500 400 300 200 100 0 25 10 0,2 VDS max 0,8 VDS max 8 6 4 2 45 65 85 105 125 145 C 185 Tj 0 0 20 40 60 80 100 120 140 160 180 nC 210 QGate 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 48 SPP80N04S2-04 V 46 V(BR)DSS 45 44 43 42 41 40 39 38 37 36 -60 -20 20 60 100 140 C 200 Tj Page 7 2004-05-24 SPI80N04S2-04 SPP80N04S2-04,SPB80N04S2-04 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSPP80N04S2-04 and BSPB80N04S2-04, for simplicity the device is referred to by the term SPP80N04S2-04 and SPB80N04S2-04 throughout this documentation. Page 8 2004-05-24 |
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